IGBT 100A 1200V APT100GN120J

Tranzistor IGBT 100A 1200V APT100GN120J
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Manufacturer:
Microsemi
Product Category:
IGBT Modules
RoHS:
Details

Product:
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max:
1.2 kV
Collector-Emitter Saturation Voltage:
1.7 V
Continuous Collector Current at 25 C:
153 A
Gate-Emitter Leakage Current:
600 nA
Pd - Power Dissipation:
446 W
Package/Case:
SOT-227-4
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Height:
9.6 mm

Length:
38.2 mm

Operating Temperature Range:
- 55 C to + 150 C

Width:
25.4 mm

Brand:
Microsemi

Mounting Style:
Screw

Maximum Gate Emitter Voltage:
+/- 30 V

Factory Pack Quantity:
1

Tradename:
ISOTOP

Unit Weight:
30 g